2012. 8. 22 1/5 semiconductor technical data KMA3D6N20SA n-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment. features h v dss =20v, i d =3.6a h drain-source on resistance r ds(on) =45m ? (max.) @ v gs =4.5v r ds(on) =65m ? (max.) @ v gs =2.5v h super hige dense cell design maximum rating (ta=25 ? ) dim millimeters sot-23 a bc d e 2.93 0.20 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q note : surface mounted on fr4 board, t ? 10sec. pin connection (top view) characteristic symbol n-ch unit drain-source voltage v dss 20 v gate-source voltage v gss ? 12 v drain current dc i d 3.6 a pulsed i dp 14 drain-source-diode forward current i s 1.25 a drain power dissipation t a =25 ? p d 1.25 w t a =70 ? 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient r thja 100 ? /w 2 3 1 gs d 1 2 3 knc downloaded from: http:///
2012. 8. 22 2/5 KMA3D6N20SA revision no : 2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =250 a, v gs =0v, 20 - - v drain cut-off current i dss v gs =0v, v ds =16v - - 1 a gate leakage current i gss v gs = ? 10v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 0.6 0.9 1.5 v drain-source on resistance r ds(on) * v gs =4.5v, i d =2.5a - 32 45 m ? v gs =2.5v, i d =2a - 50 65 on-state drain current i d(on) * v gs =4.5v, v ds =5v 10 - - a forward transconductance g fs * v ds =5v, i d =3a - 8 - s dynamic input capaclitance c iss v ds =15v, v gs = 0v, f=1mhz, - 437 - pf ouput capacitance c oss - 87 - reverse transfer capacitance c rss - 51 - total gate charge q g * v ds =10v, v gs =4.5v, i d =3.5a - 6.6 - nc gate-source charge q gs * - 0.8 - gate-drain charge q gd * - 1.85 - turn-on delay time t d(on) * v dd =10v, v gs =4.5v i d =1a, r g =6 ? (note 1) - 13 - ns turn-on rise time t r * - 19 - turn-off delay time t d(off) * - 85 - turn-off fall time t f * - 47 - source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i dr =1.25a - 0.81 1.2 v note 1> * : pulse test : pulse width <300 k , duty cycle < 2% downloaded from: http:///
2012. 8. 22 3/5 KMA3D6N20SA revision no : 2 downloaded from: http:///
2012. 8. 22 4/5 KMA3D6N20SA revision no : 2 downloaded from: http:///
2012. 8. 22 5/5 KMA3D6N20SA revision no : 2 fig9. gate charge circuit and wave form v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig10. resistive load switching v ds v gs v ds v gs 2.0 ma schottkydiode 10 v 6 r l 0.5 v dss 0.5 v dss downloaded from: http:///
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